| PART |
Description |
Maker |
| CMS3216LAF CMS3216LAG CMS3216LAH |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| EP7312-IV-C EP7311-IV-C EP7311-EB-C EP7311-IB-C EP |
GT 3C 3#16S PIN PLUG 高性能，低功率系统，片上内存和增强的数字音频接
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 32-BIT, 74 MHz, RISC MICROCONTROLLER, PQFP208
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 高性能，低功率系统，片上内存和增强的数字音频接
|
Cirrus Logic, Inc.
|
| EM66932ABG-1H/LG |
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
|
Etron Technology, Inc.
|
| V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|
| HYB18T1G160BFL |
214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules Low Power
|
Qimonda AG
|
| MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| HYMD132G725B8M-H HYMD132G725B8M-K HYMD132G725B8M-L |
DDR SDRAM - Registered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
Low Profile Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
| W9864G6JH W9864G6JH-7S W9864G6JH-6I W9864G6JH-5 W9 |
1M ?4 BANKS ?16 BITS SDRAM
Self Refresh Current: Standard and Low Power, Sequential and Interleave Burst
|
http://
Winbond
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| M65KA512AB8W3 M65KA512AB |
512Mbit (4 Banks x 8M x 16), 133 MHz Clock Rate, Bare Die, 1.8 V Supply, Low Power SDRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
